P2N2222A http://onsemi.com 3 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit SWITCHING CHARACTERISTICS ... 2N3904 Absolute maximum ratings Ta=25 °C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 40 V Emitter-base voltage VEBO 6V Collector current IC 200 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature range Tstg-55~150 °C Ms21042 04 data sheet; Limit to your love feist piano sheet; Plastic rubber sheets; Oct 2019 sat answers sheet; Sermon review sheet; La7910 datasheet 7404; B1205 datasheet 2n3904; G084sn03 v1 datasheet; 74hct165e datasheet 2n3904; Midi piano sheet music; Luxury sheet vinyl flooring; Someone like you sheet music jekyll and hyde; 74689 datasheet ...
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Nov 30, 2015 · The main difference is in Ft; typically 1100MHz for the SS9018 and 300MHz for the 2N3904. There are different rules-of-thumb for amplifiers; one says that Ft should be five times the required upper frequency. On that basis the 2N3904 is suitable for up to about 60MHz whilst the SS9018 will serve at over 200MHz.
NPN General Purpose Transistor UMT3904 / SST3904 / MMST3904 / 2N3904!Features 1) BVCEO > 40V (IC = 1mA) 2) Complements the UMT3906 / SST3906 / MMST3906 / 2N3906.!Package, marking and packaging specifications Part No. Packaging type Marking Code Basic ordering unit (pieces) UMT3904 UMT3 R1A T106 3000 SST3904 SST3 T116 3000 MMST3904 SMT3 T146 ... 5gcf4 foam sheet ethylene vinyl2N3904 Absolute maximum ratings Ta=25 °C Characteristic Symbol Ratings Unit Collector-Base voltage VCBO 60 V Collector-Emitter voltage VCEO 40 V Emitter-base voltage VEBO 6V Collector current IC 200 mA Collector dissipation PC 625 mW Junction temperature Tj 150 °C Storage temperature range Tstg-55~150 °C DS30036 Rev. E-2 1 of 2 MMBT3904 MMBT3904 NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Epitaxial Planar Die Construction Complementary PNP Type Available (MMBT3906) Ideal for Medium Power Amplification and Switching Characteristic Symbol MMBT3904 Unit Collector-Base Voltage VCBO 60 V Collector-Emitter Voltage VCEO 40 V Emitter-Base Voltage VEBO 6.0 V 2N3409 Transistor Datasheet pdf, 2N3409 Equivalent. Parameters and Characteristics 2N3904 ELECTRICAL CHARACTERISTICS Ratings at 25¡C ambient temperature unless otherwise specified SYMBOL MIN. MAX. UNIT Small Signal Current Gain at VCE = 10 V, IC = 1 mA, f = 1 kHz hfe 100 400 — Output Admittance at VCE = 1 V, IC = 1 mA, f = 1 kHz hoe 140mS Noise Figure at VCE = 5 V, IC = 100 mA, RG = 1 kW, f = 10 É 15000 Hz NF — 5 dB Delay Time (see Fig. 1)
Data sheet status Objective speciﬁcation This data sheet contains target or goal speciﬁcations for product development. Preliminary speciﬁcation This data sheet contains preliminary data; supplementary data may be published later.
kn3904 datasheet (pdf) 1.1. kn3904s.pdf size:71k _kec semiconductor kn3904s technical data epitaxial planar npn transistor general purpose application. switching application. e features l b l dim millimeters low leakage current _ + 2.93 0.20 a b 1.30+0.20/-0.15 : icex=50na(max.) ; @vce=30v, veb=3v. 2N3904 General Purpose Transistors NPN TO-92 Page 1 31/05/05 V1.0 High Speed Switching Features: • NPN Silicon Planar Switching Transistors. • Fast switching devices exhibiting short turn-off and low saturation voltage characteristics. Micro ondes canadian tire
Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a ... 2N3904 MMBT390 4. MMPQ390 4 PZT3904. NPN General Purpose Amplifier. This device is designed as a general purpose amplif ier and switch. The useful dynamic range extends to 100 mA as a swi tch and to. 100 MHz as an amplifier. Sourced from Process 23. 2N3904 / MMBT3904 / PZT3904 2N3904 MMBT3904 PZT3904 NPN General Purpose Amplifier This device is designed as a general purpose amplifier and switch. The useful dynamic range extends to 100 mA as a switch and to 100 MHz as an amplifier. Sourced from Process 23. Absolute Maximum Ratings* TA = 25°C unless otherwise noted
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